hfs1 dec 2010 0n80 bv dss = 800 v r ds(on) typ = 0.92
i d = 9.4 a HFS10N80 800v n-channel mosfet to-220f ? originative new design ? superior avalanche rugged technology ? robust gate oxide technology ? very low intrinsic capacitances ? excellent switching characteristics ? unrivalled gate charge : 58 nc (typ ) features 2 1 3 1.gate 2. drain 3. source ? unrivalled gate charge : 58 nc (typ . ) ? extended safe operating area ? lower r ds(on) : 0.92
(typ.) @v gs =10v ? 100% avalanche tested absolute maximum ratings t c =25 e unless otherwise specified symbol parameter value units v drain source voltage 800 v v dss drain - source voltage 800 v i d drain current ? continuous (t c = 25 z 9.4* a drain current ? continuous (t c = 100 z 5.9* a i dm drain current ? pulsed (note 1) 36.0* a v gs gate-source voltage da v e as single pulsed avalanche energy (note 2) 920 mj i avalanche current (note 1) 94 a i ar avalanche current (note 1) 9 . 4 a e ar repetitive avalanche energy (note 1) 6.5 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 z ^ u???q????qcf 65 w 0.52 w/ t j , t stg operating and storage temperature range -55 to +150 t l maximum lead temperature for soldering purposes, 300 thermal resistance characteristics 1/8? from case for 5 seconds 300 symbol parameter typ. max. units r jc junction-to-case -- 1.93 `? r ja junction-to-ambient -- 62.5 * drain current limited by maximum junction temperature ?v~zy??q?v?_ra]u??????qcaba
hfs1 electrical characteristics t c =25 q c unless otherwise specified s y mbol paramete r test conditions min t y pmaxunits 0n80 y y v gs gate threshold voltage v ds = v gs , i d = 250 3 2.5 -- 4.5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 4.7 a -- 0.92 1.15 on characteristics bv di s b kd v lt v 0v i 250 3 800 v off characteristics bv dss d ra i n- s ource b rea kd own v o lt age v gs = 0 v , i d = 250 3 800 -- -- v ) bv dss / ) t j breakdown voltage temperature coefficient i d = 250 3]q?????????q?cf -- 0.99 -- ?` i dss zero gate voltage drain current v ds = 800 v, v gs = 0 v -- -- 1 3 v ds = 640 v, t c = 125 -- -- 10 3 i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 2 i gt bd l k c t i gssr g a t e- b o d y l ea k age c urren t , reverse v gs = -30 v, v ds = 0 v -- -- -100 2 c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 2800 3600 ? c oss output capacitance -- 230 300 ? c rss reverse transfer capacitance -- 20 25 ? dynamic characteristics t d(on) turn-on time v ds = 400 v, i d = 9.4 a, r g = 25 y??qe]fz -- 60 120 t r turn-on rise time -- 150 300 t d(off) turn-off delay time -- 120 240 t f turn-off fall time -- 120 240 q g total gate charge v ds = 640v, i d = 9.4 a, -- 58 75 ?t switching characteristics i s continuous source-drain diode forward current -- -- 9.4 a i sm pulsed source-drain diode forward current -- -- 36.0 v sd source - drain diode forward voltage i s = 94a v gs = 0v -- -- 14 v ds d v gs = 10 v y??qe]fz q gs gate-source charge -- 17.5 -- ?t q gd gate-drain charge -- 22 -- ?t source-drain diode maximum ratings and characteristics notes ; 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=17.3mh, i as =10.0a, v dd =50v, r g =25 : , starting t j =25 q c 3. i sd ? 9.4a, di/dt ? 300a/ s, v dd ? bv dss , starting t j =25 q c 4pl t tpl width ? 300 d t c l ? 2% v sd source drain diode forward voltage i s 9 . 4 a , v gs 0 v 1 . 4 v trr reverse recovery time i s = 9.4 a, v gs = 0 v di f /dt = 100 a/ s (note 4) -- 950 -- qrr reverse recovery charge -- 14.0 -- c ?v~zy??q?v?_ra]u??????qcaba 4 . p u l se t es t : p u l se width ? 300 s, d u t y c yc l e ? 2% 5. essentially independent of operating temperature
hfs1 typical characteristics 0n80 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v a in current [a] 10 0 10 1 150 o c 25 o c -55 o c a in current [a] 10 -1 10 0 10 1 10 -1 notes : t 1. 250 s pulse test 2. t c = 25 e i d , dr a v ds , drain-source voltage [v] figure 1. on region characteristics f igure 2. transfer characteristics 246810 10 -1 10 notes : t 1. v ds = 50v 2. 250 s pulse test i d , dr a v gs , gate-source voltage [v] 1.5 2.0 2.5 v gs = 20v v gs = 10v r ds(on) [
], u rce on-resistance 10 0 10 1 e drain current [a] figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current 0 5 10 15 20 25 30 0.5 1.0 note : t t j = 25 e drain-so u i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 150 e notes : t 1. v gs = 0v 2. 250 s pulse test 25 e i dr , revers e v sd , source-drain voltage [v] 2000 2500 3000 3500 4000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd c iss c e [pf] drain current and gate voltage variation with source current and temperature 6 8 10 12 v ds = 400v v ds = 160v v ds = 640v e voltage [v] 10 -1 10 0 10 1 0 500 1000 1500 2000 notes : t 1. v gs = 0 v 2. f = 1 mhz c rss c oss capacitan c v ds , drain-source voltage [v] 0 10203040506070 0 2 4 6 * note : i d = 9.4a v gs , gate-sourc e q g , total gate charge [nc] ?v~zy??q?v?_ra]u??????qcaba figure 5. capacitance characteristics fig ure 6. gate charge characteristics
hfs1 typical characteristics (continued) 0n80 1.0 1.1 1.2 v dss , (normalized) o urce breakdown voltage 1.0 1.5 2.0 2.5 3.0 ds(on) , (normalized) - source on-resistance figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature -100 -50 0 50 100 150 200 0.8 0.9 notes : t 1. v gs = 0 v 2. i d = 250 a b v drain-s o t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 * notes : 1. v gs = 10 v 2. i d = 4.7 a r drain - t j , junction temperature [ o c] 4 6 8 10 a in current [a] 10 0 10 1 10 2 10 p s 100 ms dc 10 ms 1 ms 100 p s operation in this area is limited by r ds(on) n current [a] figure 9. maximum safe operating ar ea figure 10. maximum drain current ct t 25 50 75 100 125 150 0 2 4 i d , dr a t c , case temperature [ o c] 10 0 10 1 10 2 10 3 10 -2 10 -1 * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drai v ds , drain-source voltage [v] vs c ase t empera t ure 10 0 * n otes : 1. z t jc (t) = 1.93 o c/w max. 2. d uty f actor, d = t 1 /t 2 3t t =p *z (t) d=0.5 0.2 005 0.1 a l response fi 11 t i t th l r c t 2 t 1 p dm 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 3 . t jm - t c = p dm * z t jc (t) single pulse 0.02 0 . 05 0.01 z t jc (t), therm a t 1 , s quare w ave p ulse d uration [sec] ?v~zy??q?v?_ra]u??????qcaba fi gure 11 . t rans i en tth erma lr esponse c urve
hfs1 fig 12. gate charge test circuit & waveform 0n80 v gs 10v q g q gs q gd v gs v ds 300nf 50k
200nf 12v same type as dut charge 3ma dut fig 13. resistive switching test circuit & waveforms v ds 90% v dd ( 0.5 rated v ds ) v ds r l r g fig 14. unclamped inductive switching test circuit & waveforms v in 10% t d(on) t r t on t off t d(off) t f 10v dut e as =l l i as 2 ---- 2 1 -------------------- bv dss -- v dd bv dss v dd v ds bv dss v i as v (t) i d (t) r g l i d t p v dd v ds (t) time 10v dut ?v~zy??q?v?_ra]u??????qcaba
hfs1 0n80 fig 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type dut v l i s as dut v gs ? dv/dt controlled by r g ?i s controlled by pulse period v dd g 10v v gs ( driver ) i s ( dut ) i fm , body diode forward current i di/dt d = g ate pulse width gate pulse period -------------------------- v ds ( dut ) v dd v f body diode reverse current i rm body diode recovery dv/dt body diode forward voltage drop ?v~zy??q?v?_ra]u??????qcaba
hfs1 package dimension 0n80 0.20 254 0 20 0.20 0 2 0 { v { v t t y y w m y y w m 0.70 0.20 0.20 0 .20 6.68 0.20 2 . 54 0 . 20 3 3 . 1 8 0 . 2 3.30 15.87 0 12.42 0.20 276 0 20 080 020 1.47max 050 020 2 . 76 0 . 20 9.75 0.20 2.54typ 0 . 80 0 . 20 0 . 50 0 . 20 2.54typ ?v~zy??q?v?_ra]u??????qcaba
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